Ferroelectric Memory GmbH (FMC) has completed a US$20 million Series B funding. The round of financing was led by the new investors M Ventures and imec.xpand, with participation of SK hynix, Robert Bosch Venture Capital, and TEL Venture Capital. The lead investor of Series A, eCapital, also participated.
The new set of investors aims to support FMC throughout the whole semiconductor value chain to bring FMC's ferroelectric memory technology to market. The company plans to expand its team in Dresden, Germany as well as to start international expansion, including into the U.S. and Asian markets.
“The rise of AI, IoT, Big Data, and 5G are demanding next-generation memory solutions that enable superior speed and ultra-low power consumption, while being compatible with leading-edge CMOS logic processes guaranteeing reduced manufacturing costs,” said Ali Pourkeramati, CEO of FMC.
“This funding will speed up the commercialization of our ferroelectric field-effect transistor (FeFET) and capacitor (FeCAP) technology into exponentially increasing markets in the AI, IoT, embedded memory, and high-performance standalone data centre sectors.”
FMC said it has already made significant progress in the development of its non-volatile memory technology promising to offer superior performance compared with state-of-the-art and emerging memory solutions. It is currently working closely major semiconductor companies, as well as with foundries in the US, Europe, and Asia.
According to a release from Robert Bosch Venture Capital, “current memory technologies are facing limits to their continued improvement while the need for higher density, lower latency, and lower power consumption are the primary factors that are propelling the adoption of emerging non-volatile memory (NVM). Market Research Firm Yole expects the market for emerging NVM to grow fast and reach US $6.2 billion by 2025.
“FMC’s patented technology makes it simple to transform hafnium-oxide (HfO2) into a ferroelectric memory cell. In other words, every standard CMOS transistor and capacitor can be turned into a NVM cell – a FeFET or FeCAP. FMC’s memory technology uses the ferroelectric properties of crystalline HfO2. HfO2 in its amorphous form is already the gate isolator material of every CMOS transistor from planar to FinFET. FeCAPs can be integrated into CMOS production lines using existing equipment without the need for extra capital.”